Design and Analysis of a Graded-Index Strained Si<inline-formula><tex-math notation="LaTeX">$_{1-x}$ </tex-math></inline-formula>Ge<inline-formula><tex-math notation="LaTeX">$_x$</tex-math></inline-formula> Optical PN Phase Shifter

Design and Analysis of a Graded-Index Strained Si<inline-formula><tex-math notation="LaTeX">$_{1-x}$ </tex-math></inline-formula>Ge<inline-formula><tex-math notation="LaTeX">$_x$</tex-math></inline-formula> Optical PN Phase Shifter

In this paper, a graded-index strained Si<inline-formula><tex-math notation="LaTeX">$_{1-x}$</tex-math> </inline-formula>Ge<inline-formula><tex-math notation="LaTeX">$_x$</tex-math></inline-formula> optical PN phase shifter with mul...

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Bibliographic Details
Main Authors: Darpan Mishra, Ramesh Kumar Sonkar
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Graded-index
phase shifter
silicon-germanium
Online Access:https://ieeexplore.ieee.org/document/8528355/
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Summary:In this paper, a graded-index strained Si<inline-formula><tex-math notation="LaTeX">$_{1-x}$</tex-math> </inline-formula>Ge<inline-formula><tex-math notation="LaTeX">$_x$</tex-math></inline-formula> optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550&#x00A0;nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122<inline-formula> <tex-math notation="LaTeX">$^\circ$</tex-math></inline-formula>/mm, V<inline-formula><tex-math notation="LaTeX">$_\pi$ </tex-math></inline-formula>L<inline-formula><tex-math notation="LaTeX">$_\pi$</tex-math></inline-formula> of 0.74 V.cm, and insertion loss of 4&#x00A0;dB at 5&#x00A0;V reverse bias with a 3-dB modulation bandwidth of 27.5&#x00A0;GHz has been obtained for a 500&#x00A0;nm &#x00D7; 250&#x00A0;nm cross-section rib waveguide with 50&#x00A0;nm slab. A 15 <inline-formula><tex-math notation="LaTeX">$^\circ$</tex-math></inline-formula>/mm increase in phase shift and 0.08&#x00A0;V.cm decrease in V<inline-formula><tex-math notation="LaTeX">$_\pi$</tex-math></inline-formula>L <inline-formula><tex-math notation="LaTeX">$_\pi$</tex-math></inline-formula> has been observed when the junction is shifted by 60&#x00A0;nm towards the N side.
ISSN:1943-0655

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