ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD
Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperat...
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2013-08-01
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| Series: | Тонкие химические технологии |
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| Online Access: | https://www.finechem-mirea.ru/jour/article/view/574 |
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| author | Т. А. Bagaev М. А. Ladugin А. А. Padalitsa А. А. Marmalyuk |
| author_facet | Т. А. Bagaev М. А. Ladugin А. А. Padalitsa А. А. Marmalyuk |
| author_sort | Т. А. Bagaev |
| collection | DOAJ |
| description | Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperature increases, the etching of solid GaAs with the formation of volatile GaCl3 becomes the leading contribution to the growth rate reduction. |
| format | Article |
| id | doaj-art-10cab1ce9c704d1db9406ec23d56c1a5 |
| institution | Matheson Library |
| issn | 2410-6593 2686-7575 |
| language | Russian |
| publishDate | 2013-08-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Тонкие химические технологии |
| spelling | doaj-art-10cab1ce9c704d1db9406ec23d56c1a52025-08-04T10:19:35ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752013-08-01847779568ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVDТ. А. Bagaev0М. А. Ladugin1А. А. Padalitsa2А. А. Marmalyuk3M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571Sigm Plus, Moscow, 117342Sigm Plus, Moscow, 117342M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571; Sigm Plus, Moscow, 117342Recently carbon-doped epitaxial layers become more attractive in most practical applications. In this paper we have considered the mechanisms of etching of CCl<sub>4</sub>-doped GaAs grown by MOCVD in the temperature range of 600–800°C. It has been shown that, as temperature increases, the etching of solid GaAs with the formation of volatile GaCl3 becomes the leading contribution to the growth rate reduction.https://www.finechem-mirea.ru/jour/article/view/574gaas, ccl<sub>4</sub> doping, etching mechanism, mocvd. |
| spellingShingle | Т. А. Bagaev М. А. Ladugin А. А. Padalitsa А. А. Marmalyuk ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD Тонкие химические технологии gaas, ccl<sub>4</sub> doping, etching mechanism, mocvd. |
| title | ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD |
| title_full | ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD |
| title_fullStr | ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD |
| title_full_unstemmed | ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD |
| title_short | ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD |
| title_sort | etching mechanism of ccl sub 4 sub doped gaas grown by mocvd |
| topic | gaas, ccl<sub>4</sub> doping, etching mechanism, mocvd. |
| url | https://www.finechem-mirea.ru/jour/article/view/574 |
| work_keys_str_mv | AT tabagaev etchingmechanismofcclsub4subdopedgaasgrownbymocvd AT maladugin etchingmechanismofcclsub4subdopedgaasgrownbymocvd AT aapadalitsa etchingmechanismofcclsub4subdopedgaasgrownbymocvd AT aamarmalyuk etchingmechanismofcclsub4subdopedgaasgrownbymocvd |