19~21 GHz GaAs high linearity power amplifier MMIC
Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | Chinese |
| Published: |
National Computer System Engineering Research Institute of China
2025-04-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000171294 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1839651679138480128 |
|---|---|
| author | Liu Xiaoyu Han Chenghao Ruan Wenwu Guo Runnan Liu Ling Xu Xindong Hou Zewen Zhuang Yuan Yu Xuming Tao Hongqi |
| author_facet | Liu Xiaoyu Han Chenghao Ruan Wenwu Guo Runnan Liu Ling Xu Xindong Hou Zewen Zhuang Yuan Yu Xuming Tao Hongqi |
| author_sort | Liu Xiaoyu |
| collection | DOAJ |
| description | Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have a critical impact on RF front-end performance. The amplifier incorporates a cold-mode linearization circuit cascaded at the power amplifier gate to compensate for the amplifier's phase distortion characteristics, thereby enhancing linearity and efficiency. To address the voltage sensitivity issue of the cold mode, an on-chip active voltage stabilization and temperature compensation bias circuit is employed to expand the dynamic range, reduce large dynamic distortion, and mitigate the deterioration of linearity caused by process variations and external discreteness. The room temperature measured results demonstrate that the achieved saturated output power of 22.3~22.8 dBm with 35.3%~36.5% saturated power-added efficiency (PAE) between 19 GHz and 21 GHz. Especially, the measured IMD3 at 19 GHz, 20 GHz and 21 GHz is below -30 dBc with an output power level of 19 dBm. For a 64-QAM orthogonal frequency division multiplexing signal with 6 dB peak-to-average power ratio and 100 MHz bandwidth，the PA exhibits an adjacent channel power ratio of -31.9 dBc、-33.2 dBc and -31.2 dBc when the error vector magnitude are 4.32%、4.13% and 5.3%. |
| format | Article |
| id | doaj-art-1052c56c44b847d5abb642584e6bcc31 |
| institution | Matheson Library |
| issn | 0258-7998 |
| language | zho |
| publishDate | 2025-04-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj-art-1052c56c44b847d5abb642584e6bcc312025-06-26T01:48:36ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982025-04-01514727810.16157/j.issn.0258-7998.256340300017129419~21 GHz GaAs high linearity power amplifier MMICLiu Xiaoyu0Han Chenghao1Ruan Wenwu2Guo Runnan3Liu Ling4Xu Xindong5Hou Zewen6Zhuang Yuan7Yu Xuming8Tao Hongqi9Nanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteNanjing Electronic Devices InstituteBased on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper. In the scenario of signal transmission with high peak-to average power ratio（PAPR）,the efficiency and linearity of power amplifier（PA）have a critical impact on RF front-end performance. The amplifier incorporates a cold-mode linearization circuit cascaded at the power amplifier gate to compensate for the amplifier's phase distortion characteristics, thereby enhancing linearity and efficiency. To address the voltage sensitivity issue of the cold mode, an on-chip active voltage stabilization and temperature compensation bias circuit is employed to expand the dynamic range, reduce large dynamic distortion, and mitigate the deterioration of linearity caused by process variations and external discreteness. The room temperature measured results demonstrate that the achieved saturated output power of 22.3~22.8 dBm with 35.3%~36.5% saturated power-added efficiency (PAE) between 19 GHz and 21 GHz. Especially, the measured IMD3 at 19 GHz, 20 GHz and 21 GHz is below -30 dBc with an output power level of 19 dBm. For a 64-QAM orthogonal frequency division multiplexing signal with 6 dB peak-to-average power ratio and 100 MHz bandwidth，the PA exhibits an adjacent channel power ratio of -31.9 dBc、-33.2 dBc and -31.2 dBc when the error vector magnitude are 4.32%、4.13% and 5.3%.http://www.chinaaet.com/article/3000171294adaptive biasing circuitcold-modehigh linearitygaas |
| spellingShingle | Liu Xiaoyu Han Chenghao Ruan Wenwu Guo Runnan Liu Ling Xu Xindong Hou Zewen Zhuang Yuan Yu Xuming Tao Hongqi 19~21 GHz GaAs high linearity power amplifier MMIC Dianzi Jishu Yingyong adaptive biasing circuit cold-mode high linearity gaas |
| title | 19~21 GHz GaAs high linearity power amplifier MMIC |
| title_full | 19~21 GHz GaAs high linearity power amplifier MMIC |
| title_fullStr | 19~21 GHz GaAs high linearity power amplifier MMIC |
| title_full_unstemmed | 19~21 GHz GaAs high linearity power amplifier MMIC |
| title_short | 19~21 GHz GaAs high linearity power amplifier MMIC |
| title_sort | 19 21 ghz gaas high linearity power amplifier mmic |
| topic | adaptive biasing circuit cold-mode high linearity gaas |
| url | http://www.chinaaet.com/article/3000171294 |
| work_keys_str_mv | AT liuxiaoyu 1921ghzgaashighlinearitypoweramplifiermmic AT hanchenghao 1921ghzgaashighlinearitypoweramplifiermmic AT ruanwenwu 1921ghzgaashighlinearitypoweramplifiermmic AT guorunnan 1921ghzgaashighlinearitypoweramplifiermmic AT liuling 1921ghzgaashighlinearitypoweramplifiermmic AT xuxindong 1921ghzgaashighlinearitypoweramplifiermmic AT houzewen 1921ghzgaashighlinearitypoweramplifiermmic AT zhuangyuan 1921ghzgaashighlinearitypoweramplifiermmic AT yuxuming 1921ghzgaashighlinearitypoweramplifiermmic AT taohongqi 1921ghzgaashighlinearitypoweramplifiermmic |