Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films
Sb2Te3-based thermoelectric (TE) thin-film generators are an attractive option for wearable electronics. Band engineering can effectively modulate TE performance. However, modulating the band structure of Sb2Te3 thin film remains a challenging task. In this work, titanium (Ti) doping effectively mod...
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Elsevier
2025-09-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847825000188 |
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| author | Dong Yang Bo Wu Mazhar Hussain Danish Fu Li Yue-Xing Chen Hongli Ma Guangxing Liang Xianghua Zhang Jean-François Halet Jingting Luo Dongwei Ao Zhuang-Hao Zheng |
| author_facet | Dong Yang Bo Wu Mazhar Hussain Danish Fu Li Yue-Xing Chen Hongli Ma Guangxing Liang Xianghua Zhang Jean-François Halet Jingting Luo Dongwei Ao Zhuang-Hao Zheng |
| author_sort | Dong Yang |
| collection | DOAJ |
| description | Sb2Te3-based thermoelectric (TE) thin-film generators are an attractive option for wearable electronics. Band engineering can effectively modulate TE performance. However, modulating the band structure of Sb2Te3 thin film remains a challenging task. In this work, titanium (Ti) doping effectively modifies the electronic band structure in Sb2Te3, optimizing both carrier transport and phonon transport performance. Ti-doping optimizes carrier concentration and resulting in an increase in electrical conductivity from 1420.0 S/cm to 1694.8 S/cm at 300 K. Additionally, Ti doping modulates the balance between the effective mass of charge carriers and carrier concentration, increasing Seebeck coefficient from 106.0 μV/K to 114.8 μV/K. Both enhancements lead to a peak power factor of 20.9 μW·cm−1·K−2. Moreover, Ti-induced vibrational modes have reduced the lattice thermal conductivity from 0.62 W·m−1·K−1 to 0.22 W·m−1·K−1, improving zT from 0.33 to 0.52 at 300 K. The films exhibit excellent flexibility, with an ultralow resistance change ratio (ΔR/R0) of less than 7% after 1000 cycles at a 6 mm bending radius. The device achieves a maximum output power of 178.8 nW with a temperature gradient of 30 K in agreement with the finite element analysis, indicating significant potential for wearable electronics. |
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| institution | Matheson Library |
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| language | English |
| publishDate | 2025-09-01 |
| publisher | Elsevier |
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| series | Journal of Materiomics |
| spelling | doaj-art-0fd8c1b824f24a0cad3847d32e8d77d02025-06-29T04:52:22ZengElsevierJournal of Materiomics2352-84782025-09-01115101028Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin filmsDong Yang0Bo Wu1Mazhar Hussain Danish2Fu Li3Yue-Xing Chen4Hongli Ma5Guangxing Liang6Xianghua Zhang7Jean-François Halet8Jingting Luo9Dongwei Ao10Zhuang-Hao Zheng11Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, China; Univ Rennes, CNRS, ISCR (Istitut des Sciences Chimiques de Rennes) UMR 6226, Rennes, F-35000, FranceShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, ChinaShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, ChinaUniv Rennes, CNRS, ISCR (Istitut des Sciences Chimiques de Rennes) UMR 6226, Rennes, F-35000, FranceShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, ChinaUniv Rennes, CNRS, ISCR (Istitut des Sciences Chimiques de Rennes) UMR 6226, Rennes, F-35000, FranceUniv Rennes, CNRS, ISCR (Istitut des Sciences Chimiques de Rennes) UMR 6226, Rennes, F-35000, FranceShenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, ChinaSchool of Machinery and Automation, Weifang University, Weifang, 261061, Shandong, China; School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China; Corresponding author. School of Machinery and Automation, Weifang University, Weifang, 261061, Shandong, China.Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, China; Corresponding author.Sb2Te3-based thermoelectric (TE) thin-film generators are an attractive option for wearable electronics. Band engineering can effectively modulate TE performance. However, modulating the band structure of Sb2Te3 thin film remains a challenging task. In this work, titanium (Ti) doping effectively modifies the electronic band structure in Sb2Te3, optimizing both carrier transport and phonon transport performance. Ti-doping optimizes carrier concentration and resulting in an increase in electrical conductivity from 1420.0 S/cm to 1694.8 S/cm at 300 K. Additionally, Ti doping modulates the balance between the effective mass of charge carriers and carrier concentration, increasing Seebeck coefficient from 106.0 μV/K to 114.8 μV/K. Both enhancements lead to a peak power factor of 20.9 μW·cm−1·K−2. Moreover, Ti-induced vibrational modes have reduced the lattice thermal conductivity from 0.62 W·m−1·K−1 to 0.22 W·m−1·K−1, improving zT from 0.33 to 0.52 at 300 K. The films exhibit excellent flexibility, with an ultralow resistance change ratio (ΔR/R0) of less than 7% after 1000 cycles at a 6 mm bending radius. The device achieves a maximum output power of 178.8 nW with a temperature gradient of 30 K in agreement with the finite element analysis, indicating significant potential for wearable electronics.http://www.sciencedirect.com/science/article/pii/S2352847825000188Sb2Te3 thin filmsTi dopingDFTElectron structurePhonon spectrum |
| spellingShingle | Dong Yang Bo Wu Mazhar Hussain Danish Fu Li Yue-Xing Chen Hongli Ma Guangxing Liang Xianghua Zhang Jean-François Halet Jingting Luo Dongwei Ao Zhuang-Hao Zheng Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films Journal of Materiomics Sb2Te3 thin films Ti doping DFT Electron structure Phonon spectrum |
| title | Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films |
| title_full | Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films |
| title_fullStr | Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films |
| title_full_unstemmed | Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films |
| title_short | Electronic state reconstruction enabling high thermoelectric performance in Ti doped Sb2Te3 flexible thin films |
| title_sort | electronic state reconstruction enabling high thermoelectric performance in ti doped sb2te3 flexible thin films |
| topic | Sb2Te3 thin films Ti doping DFT Electron structure Phonon spectrum |
| url | http://www.sciencedirect.com/science/article/pii/S2352847825000188 |
| work_keys_str_mv | AT dongyang electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT bowu electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT mazharhussaindanish electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT fuli electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT yuexingchen electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT honglima electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT guangxingliang electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT xianghuazhang electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT jeanfrancoishalet electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT jingtingluo electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT dongweiao electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms AT zhuanghaozheng electronicstatereconstructionenablinghighthermoelectricperformanceintidopedsb2te3flexiblethinfilms |