Studying the effect of annealing on some electrical and optical properties for thin CdS , CdS:In films
In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical pro...
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Format: | Article |
Language: | English |
Published: |
University of Baghdad, College of Science for Women
2010-09-01
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Series: | مجلة بغداد للعلوم |
Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/1082 |
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Summary: | In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical properties of the deposited films was achieved . The study shows that the film polycrystalline by XRD result for all film and the energy gap was direct to 2.38 eV with no effect on this value by impurities at this constration . |
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ISSN: | 2078-8665 2411-7986 |