Accumulated dose stability parameters in p-type and n-type silicon diodes

Accumulated dose stability parameters in p-type and n-type silicon diodes

This work investigates the influence of doping type on the dose responses and the accumulated dose stability of n- and p-type silicon MCz diodes. The operating principle of diode-based dosimeters relies on measuring the radiation-induced currents delivered by non-polarized diodes throughout the exp...

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Bibliographic Details
Main Authors: Kelly Pascoalino, Josemary A. C. Gonçalves, Fabio de Camargo, Carmen C. Bueno
Format: Article
Language:English
Published: Brazilian Radiation Protection Society (Sociedade Brasileira de Proteção Radiológica, SBPR) 2025-02-01
Series:Brazilian Journal of Radiation Sciences
Subjects:
silicon diodes
rad-hard diodes
radiation processing dosimetry
high-dose dosimetry
Online Access:https://bjrs.org.br/revista/index.php/REVISTA/article/view/2601
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