In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy
Abstract The anisotropic properties of materials profoundly influence their electronic, magnetic, optical, and mechanical behaviors and are critical for a wide range of applications. In this study, the anisotropic characteristics of Ni‐based van der Waals materials, specifically NiTe2 and its alloy...
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| Format: | Article |
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Wiley
2025-03-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202410549 |
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| author | Nguyen Huu Lam Tae Gyu Rhee Seongmun Kim Byoung Ki Choi Dang Nguyen Hoang Ganbat Duvjir Younghun Hwang Jaekwang Lee Young Jun Chang Jungdae Kim |
| author_facet | Nguyen Huu Lam Tae Gyu Rhee Seongmun Kim Byoung Ki Choi Dang Nguyen Hoang Ganbat Duvjir Younghun Hwang Jaekwang Lee Young Jun Chang Jungdae Kim |
| author_sort | Nguyen Huu Lam |
| collection | DOAJ |
| description | Abstract The anisotropic properties of materials profoundly influence their electronic, magnetic, optical, and mechanical behaviors and are critical for a wide range of applications. In this study, the anisotropic characteristics of Ni‐based van der Waals materials, specifically NiTe2 and its alloy NiTeSe, utilizing a combination of comprehensive scanning tunneling microscopy (STM), angle‐resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations, are explored. Unlike 1T‐NiTe2, which exhibits trigonal in‐plane symmetry, the substitution of Te with Se in NiTe2 (resulting in the NiTeSe alloy) induces a pronounced in‐plane anisotropy. This anisotropy is clear in the STM topographs, which reveal a distinct linear order of charge distribution. Corroborating these observations, ARPES measurements and DFT calculations reveal an anisotropic Fermi surface centered at the Γ¯ point, which is notably elongated along the ky direction, leading to directional variations in in‐plane carrier velocities. Consequently, the Fermi velocity is highest along the kx direction where the linear charge distribution aligns in real space and is lowest along the ky direction. These findings offer valuable insights into the tunability of anisotropic properties in ternary transition metal dichalcogenide systems, highlighting their potential applications in the development of anisotropic electronic and optoelectronic devices. |
| format | Article |
| id | doaj-art-0457c46c20604061ba4e57fbb547c042 |
| institution | Matheson Library |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-0457c46c20604061ba4e57fbb547c0422025-06-27T08:21:37ZengWileyAdvanced Science2198-38442025-03-01129n/an/a10.1002/advs.202410549In‐Plane Anisotropy in van der Waals NiTeSe Ternary AlloyNguyen Huu Lam0Tae Gyu Rhee1Seongmun Kim2Byoung Ki Choi3Dang Nguyen Hoang4Ganbat Duvjir5Younghun Hwang6Jaekwang Lee7Young Jun Chang8Jungdae Kim9Department of Physics University of Ulsan Ulsan 44610 Republic of KoreaDepartment of Physics University of Seoul Seoul 02504 Republic of KoreaDepartment of Physics Pusan National University Busan 46241 Republic of KoreaDepartment of Physics University of Seoul Seoul 02504 Republic of KoreaDepartment of Physics University of Ulsan Ulsan 44610 Republic of KoreaDepartment of Physics University of Ulsan Ulsan 44610 Republic of KoreaElectricity and Electronics and Semiconductor Applications Ulsan College Ulsan 44610 Republic of KoreaDepartment of Physics Pusan National University Busan 46241 Republic of KoreaDepartment of Physics University of Seoul Seoul 02504 Republic of KoreaDepartment of Physics University of Ulsan Ulsan 44610 Republic of KoreaAbstract The anisotropic properties of materials profoundly influence their electronic, magnetic, optical, and mechanical behaviors and are critical for a wide range of applications. In this study, the anisotropic characteristics of Ni‐based van der Waals materials, specifically NiTe2 and its alloy NiTeSe, utilizing a combination of comprehensive scanning tunneling microscopy (STM), angle‐resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations, are explored. Unlike 1T‐NiTe2, which exhibits trigonal in‐plane symmetry, the substitution of Te with Se in NiTe2 (resulting in the NiTeSe alloy) induces a pronounced in‐plane anisotropy. This anisotropy is clear in the STM topographs, which reveal a distinct linear order of charge distribution. Corroborating these observations, ARPES measurements and DFT calculations reveal an anisotropic Fermi surface centered at the Γ¯ point, which is notably elongated along the ky direction, leading to directional variations in in‐plane carrier velocities. Consequently, the Fermi velocity is highest along the kx direction where the linear charge distribution aligns in real space and is lowest along the ky direction. These findings offer valuable insights into the tunability of anisotropic properties in ternary transition metal dichalcogenide systems, highlighting their potential applications in the development of anisotropic electronic and optoelectronic devices.https://doi.org/10.1002/advs.202410549anisotropyARPESDFTNiTe2NiTeSeSTM |
| spellingShingle | Nguyen Huu Lam Tae Gyu Rhee Seongmun Kim Byoung Ki Choi Dang Nguyen Hoang Ganbat Duvjir Younghun Hwang Jaekwang Lee Young Jun Chang Jungdae Kim In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy Advanced Science anisotropy ARPES DFT NiTe2 NiTeSe STM |
| title | In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy |
| title_full | In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy |
| title_fullStr | In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy |
| title_full_unstemmed | In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy |
| title_short | In‐Plane Anisotropy in van der Waals NiTeSe Ternary Alloy |
| title_sort | in plane anisotropy in van der waals nitese ternary alloy |
| topic | anisotropy ARPES DFT NiTe2 NiTeSe STM |
| url | https://doi.org/10.1002/advs.202410549 |
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