APA (7th ed.) Citation

Wu, D. H., & Matis, B. R. (2012). Electron Transport Properties of Gate-Defined GaAs/AlxGa1-xAs Quantum Dot. IntechOpen. https://doi.org/10.5772/34225

Chicago Style (17th ed.) Citation

Wu, Dong Ho, and Bernard R. Matis. Electron Transport Properties of Gate-Defined GaAs/AlxGa1-xAs Quantum Dot. IntechOpen, 2012. https://doi.org/10.5772/34225.

MLA (9th ed.) Citation

Wu, Dong Ho, and Bernard R. Matis. Electron Transport Properties of Gate-Defined GaAs/AlxGa1-xAs Quantum Dot. IntechOpen, 2012. https://doi.org/10.5772/34225.

Warning: These citations may not always be 100% accurate.