Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications

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Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications

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Bibliographic Details
Main Author:	Privitera, Stefania Maria Serena
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2012
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/37189
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