Investigation of High-Speed Transient Processes and Parameter Extraction of InGaAsP Laser Diodes

QR Code

Investigation of High-Speed Transient Processes and Parameter Extraction of InGaAsP Laser Diodes

None

Saved in:

Bibliographic Details
Main Authors:	Vysniauskas, Juozas, Vasiliauskas, Tomas, Sermuksnis, Emilis, Palenskis, Vilius, Matukas, Jonas
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2012
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/35907
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Low Frequency Noise Characteristics of Multimode and Singlemode Laser Diodes
by: Pralgauskaitee, Sandra, et al.
Published: (2012)

Ohmic Contacts With Ultra-Low Optical Loss on Heavily Doped n-Type InGaAs and InGaAsP for InP-Based Photonic Membranes
by: L. Shen, et al.
Published: (2016-01-01)

Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode
by: Thahab, Sabah M.
Published: (2012)

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
by: Steffan Gwyn, et al.
Published: (2021-01-01)

Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes
by: Kwak, Joon Seop
Published: (2012)

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
by: Jing Yang, et al.
Published: (2017-01-01)

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
by: Jing Yang, et al.
Published: (2018-01-01)

Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
by: Bryan Melanson, et al.
Published: (2021-01-01)

PREPARATION AND RESEARCH OF HETEROSTRUCTURES GaP / Si BY PULSED LASER DEPOSITION
by: Oleg Devitsky, et al.
Published: (2022-05-01)

Improved Performance of AlGaInP Red Micro Light-Emitting Diodes by Sidewall Treatments of Citric Acid
by: Zhen-Jin Wang, et al.
Published: (2024-01-01)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
by: A. D. Yunik, et al.
Published: (2022-12-01)

Laser Diode Gas Spectroscopy
by: Vadillo, Pablo Pineda
Published: (2012)

On Ga2O3 Self‐Switching Nano‐Diodes
by: Glen Isaac Maciel García, et al.
Published: (2025-07-01)

GaN-Based Cyan Light-Emitting Diode with up to 1-GHz Bandwidth for High-Speed Transmission Over SI-POF
by: Juri Vinogradov, et al.
Published: (2017-01-01)

Semiconductor laser diodes a users handbook
by: Fabian, M. E. (Malcolm Edward)
Published: (1981)

Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
by: A. V. Sapozhnikov, et al.
Published: (2025-07-01)

Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping
by: Qianying Si, et al.
Published: (2017-01-01)

Monitoring of Welding Using Laser Diodes
by: Abdullah, Badr M.
Published: (2012)

Transient Analysis of Donor-like Surface Traps in GaN HEMTs
by: Amirali Chalechale, et al.
Published: (2022-12-01)

Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
by: Tian Lan, et al.
Published: (2018-01-01)

Demonstration of InP-on-Si Self-Pulsating DFB Laser Diodes for Optical Microwave Generation
by: Keqi Ma, et al.
Published: (2017-01-01)

Fabrication and characterization of Ag-BaF2/GaSb Schottky diode
by: Abdulsamee Fawzi Abdulaziz
Published: (2023-01-01)

Investigation of Light-Extraction Efficiency of Flip-Chip AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Adopting AlGaN Metasurface
by: Joosun Yun, et al.
Published: (2021-01-01)

EFFECT OF MORPHOLOGY ON ELECTRONIC PROPERTIES OF THE <111> -ORIENTED GaAs, GaP, GaSb, InAs, InP AND InSb NANOWIRES
by: D. A. Yatsyna, et al.
Published: (2019-06-01)

DFB Laser Diode Dynamics with Optoelectronic Feedback
by: Shahine, M. H.
Published: (2012)

Laser Diode Pump Technology for Space Applications
by: Troupaki, Elisavet, et al.
Published: (2012)

The Development of Laser Diode Arrays for Printing Applications
by: Kowalski, O. P.
Published: (2012)

Advances in High-Power Laser Diode Packaging
by: Ronnie, Teo Jin Wah
Published: (2012)

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
by: Zi-Hui Zhang, et al.
Published: (2016-01-01)

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
by: Zhiheng Quan, et al.
Published: (2016-01-01)

GaN FET Push–Pull Driver Circuit Enabling Power Light Emitting Diode to be a High-Efficiency, High-Speed Wireless Transmitter
by: Yicheng Wu, et al.
Published: (2018-01-01)

Fabrication of InGaN-Based Vertical Light Emitting Diodes Using Electroplating
by: Lee, Jae-Hoon, et al.
Published: (2012)

Enhancing Light Extraction Efficiency of Vertical Emission of AlGaN Nanowire Light Emitting Diodes With Photonic Crystal
by: Pengwei Du, et al.
Published: (2019-01-01)

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes
by: Ting Zhi, et al.
Published: (2016-01-01)

Three-Dimensional Numerical Study on the Efficiency Droop in InGaN/GaN Light-Emitting Diodes
by: Quoc-Hung Pham, et al.
Published: (2019-01-01)

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes
by: Fei-Fan Xu, et al.
Published: (2020-01-01)

Thermoradiative energy conversion in infrared interband cascade InAs/GaSb/AlInSb/GaSb type-II superlattice diodes
by: Md Toriqul Islam, et al.
Published: (2025-06-01)

Surface mechanics of GaAsP/GaAs epilayers for non-linear optical devices
by: Samuel M. Linser, et al.
Published: (2025-07-01)

THERMAL MODELLING OF TERAHERTZ QUANTUM-CASCADE LASER BASED ON NANOHETEROSTRUCTURES GaAs/AlGaAs
by: I. A. Glinskiy, et al.
Published: (2016-06-01)

Effectiveness of bacterial biofilms photodynamic inactivation mediated by curcumin extract, nanodoxycycline and laser diode
by: S. D. Astuti, et al.
Published: (2021-02-01)