Electrical Transport in Ternary Alloys: AlGaN and InGaN and Their Role in Optoelectronic

QR Code

Electrical Transport in Ternary Alloys: AlGaN and InGaN and Their Role in Optoelectronic

None

Saved in:

Bibliographic Details
Main Authors:	Bachir, N., Hamdoune, A., Sari, N. E. Chabane
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2012
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/35900
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode
by: Thahab, Sabah M.
Published: (2012)

Investigation of temperature-dependent performance degradation in AlGaN/InGaN/GaN HEMTs: Implications for device reliability and efficiency
by: Neda Ahmad, et al.
Published: (2025-06-01)

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
by: Fulong Jiang, et al.
Published: (2018-01-01)

Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
by: Yan Dong, et al.
Published: (2025-06-01)

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer
by: Hongchang Tao, et al.
Published: (2023-01-01)

Modeling AlGaN p-i-n photodiodes
by: N. N. Vorsin, et al.
Published: (2022-01-01)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
by: A. D. Yunik, et al.
Published: (2022-12-01)

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
by: Jing Yang, et al.
Published: (2017-01-01)

Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs
by: Soumen Deb, et al.
Published: (2025-01-01)

Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer
by: Lei Li, et al.
Published: (2016-01-01)

AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications
by: Ren, Fan, et al.
Published: (2011)

Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment
by: J. K. Lian, et al.
Published: (2025-01-01)

Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
by: Bryan Melanson, et al.
Published: (2021-01-01)

Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry
by: Jaesun Kim, et al.
Published: (2025-07-01)

INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS
by: O. A. Ruban, et al.
Published: (2016-10-01)

Investigation of Light-Extraction Efficiency of Flip-Chip AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Adopting AlGaN Metasurface
by: Joosun Yun, et al.
Published: (2021-01-01)

Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well
by: Fanming Zeng, et al.
Published: (2016-01-01)

System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity
by: Toiyob Hossain, et al.
Published: (2025-01-01)

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes
by: Qing Cai, et al.
Published: (2017-01-01)

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection
by: Long Ge, et al.
Published: (2025-06-01)

AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES
by: M. V. Rzheutski, et al.
Published: (2019-12-01)

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
by: Steffan Gwyn, et al.
Published: (2021-01-01)

Ion-selective membrane-integrated water-gated AlGaN/GaN HEMT for high-stability detection of agricultural herbicides
by: Amirul Firdaus, et al.
Published: (2025-09-01)

Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications
by: Neng-Da Li, et al.
Published: (2025-01-01)

Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure
by: A. D. Yunik, et al.
Published: (2022-06-01)

Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes
by: Haifan You, et al.
Published: (2017-01-01)

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
by: Zi-Hui Zhang, et al.
Published: (2016-01-01)

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
by: Jing Yang, et al.
Published: (2018-01-01)

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
by: Zhiheng Quan, et al.
Published: (2016-01-01)

Effect of Rapid Thermal Annealing Conditions on the Specific Resistance of the Ohmic Contacts of Ti/Al/Ni/Au Metallization to the GaN/AlGaN Heterostructure
by: A. D. Yunik, et al.
Published: (2023-01-01)

Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States
by: Sebastian Kolle, et al.
Published: (2024-01-01)

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes
by: Ting Zhi, et al.
Published: (2016-01-01)

Three-Dimensional Numerical Study on the Efficiency Droop in InGaN/GaN Light-Emitting Diodes
by: Quoc-Hung Pham, et al.
Published: (2019-01-01)

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes
by: Fei-Fan Xu, et al.
Published: (2020-01-01)

Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes
by: Gregor Hofmann, et al.
Published: (2024-01-01)

Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates
by: Ryota Akaike, et al.
Published: (2025-01-01)

Characterization and functionalization of ternary InGaN nanosurface towards energy storage system in solar cell basics: a molecular modelling study
by: F. Mollaamin
Published: (2025-06-01)

Fabrication of InGaN-Based Vertical Light Emitting Diodes Using Electroplating
by: Lee, Jae-Hoon, et al.
Published: (2012)

Improved the AlGaN-Based Ultraviolet LEDs Performance With Super-Lattice Structure Last Barrier
by: Qian Chen, et al.
Published: (2018-01-01)

Ultraviolet-A LED Based on Quantum-Disks-In-AlGaN-Nanowires—Optimization and Device Reliability
by: Bilal Janjua, et al.
Published: (2018-01-01)