Development of 2" AlN Substrates Using SiC Seeds

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Main Authors: Avdeev, O.V., Chemekova, T.Yu., Mokhov, E.N., Nagalyuk, S.S., Helava, H., Ramm, M.G., Segal, A.S., Zhmakin, A.I., Makarov, Yu.N.
Format: Electronic Book Chapter
Language:English
Published: IntechOpen 2012
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Online Access:https://www.intechopen.com/chapters/26208
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author Avdeev, O.V.
Chemekova, T.Yu.
Mokhov, E.N.
Nagalyuk, S.S.
Helava, H.
Ramm, M.G.
Segal, A.S.
Zhmakin, A.I.
Makarov, Yu.N.
author_facet Avdeev, O.V.
Chemekova, T.Yu.
Mokhov, E.N.
Nagalyuk, S.S.
Helava, H.
Ramm, M.G.
Segal, A.S.
Zhmakin, A.I.
Makarov, Yu.N.
author_sort Avdeev, O.V.
collection InTech Open eBooks
description None
doi_str_mv 10.5772/29853
first_indexed 2025-08-04T22:09:20Z
format Electronic
Book Chapter
fullrecord <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-26208</identifier><datestamp>2012-01-13</datestamp> <dc:title>Development of 2" AlN Substrates Using SiC Seeds</dc:title> <dc:creator>O.V. Avdeev</dc:creator> <dc:creator>T.Yu. Chemekova</dc:creator> <dc:creator>E.N. Mokhov</dc:creator> <dc:creator>S.S. Nagalyuk</dc:creator> <dc:creator>H. Helava</dc:creator> <dc:creator>M.G. Ramm</dc:creator> <dc:creator>A.S. Segal</dc:creator> <dc:creator>A.I. Zhmakin</dc:creator> <dc:creator>Yu.N. Makarov</dc:creator> <dc:subject>Physical Sciences, Engineering and Technology</dc:subject> <dc:description>None</dc:description> <dc:publisher>IntechOpen</dc:publisher> <dc:date>2012-01-13</dc:date> <dc:type>Chapter, Part Of Book</dc:type> <dc:identifier>https://www.intechopen.com/chapters/26208</dc:identifier> <dc:identifier>doi:10.5772/29853</dc:identifier> <dc:language>en</dc:language> <dc:relation>ISBN:978-953-307-610-2</dc:relation> <dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights> <dc:source>https://www.intechopen.com/books/837 ; Modern Aspects of Bulk Crystal and Thin Film Preparation</dc:source> </oai_dc:dc>
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institution Matheson Library
isbn 978-953-307-610-2
language English
last_indexed 2025-08-04T22:09:20Z
publishDate 2012
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spelling InTech-262082012-01-13 Development of 2" AlN Substrates Using SiC Seeds O.V. Avdeev T.Yu. Chemekova E.N. Mokhov S.S. Nagalyuk H. Helava M.G. Ramm A.S. Segal A.I. Zhmakin Yu.N. Makarov Physical Sciences, Engineering and Technology None IntechOpen 2012-01-13 Chapter, Part Of Book https://www.intechopen.com/chapters/26208 doi:10.5772/29853 en ISBN:978-953-307-610-2 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/837 ; Modern Aspects of Bulk Crystal and Thin Film Preparation
spellingShingle Physical Sciences, Engineering and Technology
Avdeev, O.V.
Chemekova, T.Yu.
Mokhov, E.N.
Nagalyuk, S.S.
Helava, H.
Ramm, M.G.
Segal, A.S.
Zhmakin, A.I.
Makarov, Yu.N.
Development of 2" AlN Substrates Using SiC Seeds
title Development of 2" AlN Substrates Using SiC Seeds
title_full Development of 2" AlN Substrates Using SiC Seeds
title_fullStr Development of 2" AlN Substrates Using SiC Seeds
title_full_unstemmed Development of 2" AlN Substrates Using SiC Seeds
title_short Development of 2" AlN Substrates Using SiC Seeds
title_sort development of 2 aln substrates using sic seeds
topic Physical Sciences, Engineering and Technology
url https://www.intechopen.com/chapters/26208
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