High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method
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| Main Authors: | , |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2012
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/26206 |
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