High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method
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| Main Authors: | , |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2012
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| Online Access: | https://www.intechopen.com/chapters/26206 |
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| _version_ | 1839564439933681664 |
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| author | Kinoshita, Kyoichi Yoda, Shinichi |
| author_facet | Kinoshita, Kyoichi Yoda, Shinichi |
| author_sort | Kinoshita, Kyoichi |
| collection | InTech Open eBooks |
| description | None |
| doi_str_mv | 10.5772/28711 |
| first_indexed | 2025-08-04T22:09:19Z |
| format | Electronic Book Chapter |
| fullrecord | <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-26206</identifier><datestamp>2012-01-13</datestamp>
<dc:title>High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method</dc:title>
<dc:creator>Kyoichi Kinoshita</dc:creator>
<dc:creator>Shinichi Yoda</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>None</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2012-01-13</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/26206</dc:identifier>
<dc:identifier>doi:10.5772/28711</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-953-307-610-2</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/837 ; Modern Aspects of Bulk Crystal and Thin Film Preparation</dc:source>
</oai_dc:dc> |
| id | InTech-26206 |
| institution | Matheson Library |
| isbn | 978-953-307-610-2 |
| language | English |
| last_indexed | 2025-08-04T22:09:19Z |
| publishDate | 2012 |
| publisher | IntechOpen |
| record_format | intech |
| spelling | InTech-262062012-01-13 High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method Kyoichi Kinoshita Shinichi Yoda Physical Sciences, Engineering and Technology None IntechOpen 2012-01-13 Chapter, Part Of Book https://www.intechopen.com/chapters/26206 doi:10.5772/28711 en ISBN:978-953-307-610-2 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/837 ; Modern Aspects of Bulk Crystal and Thin Film Preparation |
| spellingShingle | Physical Sciences, Engineering and Technology Kinoshita, Kyoichi Yoda, Shinichi High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method |
| title | High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method |
| title_full | High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method |
| title_fullStr | High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method |
| title_full_unstemmed | High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method |
| title_short | High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method |
| title_sort | high quality inxga1 xas x 0 08 0 13 crystal growth for substrates of λ 1 3 μm laser diodes by the travelling liquidus zone method |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/26206 |
| work_keys_str_mv | AT kinoshitakyoichi highqualityinxga1xasx008013crystalgrowthforsubstratesofl13mmlaserdiodesbythetravellingliquiduszonemethod AT yodashinichi highqualityinxga1xasx008013crystalgrowthforsubstratesofl13mmlaserdiodesbythetravellingliquiduszonemethod |