Kinoshita, K., & Yoda, S. (2012). High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method. IntechOpen. https://doi.org/10.5772/28711
Chicago Style (17th ed.) CitationKinoshita, Kyoichi, and Shinichi Yoda. High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method. IntechOpen, 2012. https://doi.org/10.5772/28711.
MLA (9th ed.) CitationKinoshita, Kyoichi, and Shinichi Yoda. High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method. IntechOpen, 2012. https://doi.org/10.5772/28711.
Warning: These citations may not always be 100% accurate.