Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy

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Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy

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Bibliographic Details
Main Authors:	Bouzazi, Boussairi, Suzuki, Hidetoshi, Kijima, Nobuaki, Ohshita, Yoshio, Yamaguchi, Masafumi
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/22578
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