Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy
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| Main Authors: | , , , , |
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| Format: | Electronic Book Chapter |
| Language: | English |
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IntechOpen
2011
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| Online Access: | https://www.intechopen.com/chapters/22578 |
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| _version_ | 1839565634765062144 |
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| author | Bouzazi, Boussairi Suzuki, Hidetoshi Kijima, Nobuaki Ohshita, Yoshio Yamaguchi, Masafumi |
| author_facet | Bouzazi, Boussairi Suzuki, Hidetoshi Kijima, Nobuaki Ohshita, Yoshio Yamaguchi, Masafumi |
| author_sort | Bouzazi, Boussairi |
| collection | InTech Open eBooks |
| description | None |
| doi_str_mv | 10.5772/20234 |
| first_indexed | 2025-08-04T22:28:19Z |
| format | Electronic Book Chapter |
| fullrecord | <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-22578</identifier><datestamp>2011-11-02</datestamp>
<dc:title>Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy</dc:title>
<dc:creator>Boussairi Bouzazi</dc:creator>
<dc:creator>Hidetoshi Suzuki</dc:creator>
<dc:creator>Nobuaki Kijima</dc:creator>
<dc:creator>Yoshio Ohshita</dc:creator>
<dc:creator>Masafumi Yamaguchi</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>None</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2011-11-02</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/22578</dc:identifier>
<dc:identifier>doi:10.5772/20234</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-953-307-761-1</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/1290 ; Solar Cells - New Aspects and Solutions</dc:source>
</oai_dc:dc> |
| id | InTech-22578 |
| institution | Matheson Library |
| isbn | 978-953-307-761-1 |
| language | English |
| last_indexed | 2025-08-04T22:28:19Z |
| publishDate | 2011 |
| publisher | IntechOpen |
| record_format | intech |
| spelling | InTech-225782011-11-02 Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy Boussairi Bouzazi Hidetoshi Suzuki Nobuaki Kijima Yoshio Ohshita Masafumi Yamaguchi Physical Sciences, Engineering and Technology None IntechOpen 2011-11-02 Chapter, Part Of Book https://www.intechopen.com/chapters/22578 doi:10.5772/20234 en ISBN:978-953-307-761-1 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/1290 ; Solar Cells - New Aspects and Solutions |
| spellingShingle | Physical Sciences, Engineering and Technology Bouzazi, Boussairi Suzuki, Hidetoshi Kijima, Nobuaki Ohshita, Yoshio Yamaguchi, Masafumi Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy |
| title | Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy |
| title_full | Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy |
| title_fullStr | Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy |
| title_full_unstemmed | Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy |
| title_short | Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy |
| title_sort | investigation of lattice defects in gaasn grown by chemical beam epitaxy using deep level transient spectroscopy |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/22578 |
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