APA (7th ed.) Citation

Bouzazi, B., Suzuki, H., Kijima, N., Ohshita, Y., & Yamaguchi, M. (2011). Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy. IntechOpen. https://doi.org/10.5772/20234

Chicago Style (17th ed.) Citation

Bouzazi, Boussairi, Hidetoshi Suzuki, Nobuaki Kijima, Yoshio Ohshita, and Masafumi Yamaguchi. Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy. IntechOpen, 2011. https://doi.org/10.5772/20234.

MLA (9th ed.) Citation

Bouzazi, Boussairi, et al. Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy. IntechOpen, 2011. https://doi.org/10.5772/20234.