Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

QR Code

Dilute Nitride GaAsN and InGaAsN Layers Grown by Low-Temperature Liquid-Phase Epitaxy

None

Saved in:

Bibliographic Details
Main Authors:	Milanova, Malina, Vitanov, Petko
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/22560
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Photo-Scanning Capacitance Microscopy and Spectroscopy Study of Epitaxial GaAsN Layers and GaAsN P-I-N Solar Cell Structures
by: Adam Szyszka, et al.
Published: (2025-07-01)

Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy
by: Bouzazi, Boussairi, et al.
Published: (2011)

Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer
by: Huanyou Wang, et al.
Published: (2025-05-01)

Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer
by: Lei Li, et al.
Published: (2016-01-01)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
by: A. D. Yunik, et al.
Published: (2022-12-01)

Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode
by: Thahab, Sabah M.
Published: (2012)

AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES
by: M. V. Rzheutski, et al.
Published: (2019-12-01)

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
by: Zi-Hui Zhang, et al.
Published: (2016-01-01)

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
by: Jing Yang, et al.
Published: (2017-01-01)

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer
by: Hongchang Tao, et al.
Published: (2023-01-01)

Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth
by: Ryo Kagawa, et al.
Published: (2024-12-01)

MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation
by: Reet Chaudhuri, et al.
Published: (2025-01-01)

Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
by: Yan Dong, et al.
Published: (2025-06-01)

Radiation Resistance of Epitaxial Structures Based on GaAs
by: E. N. Vigdorovich
Published: (2019-06-01)

Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
by: Jing Yang, et al.
Published: (2018-01-01)

Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry
by: Jaesun Kim, et al.
Published: (2025-07-01)

Investigation of temperature-dependent performance degradation in AlGaN/InGaN/GaN HEMTs: Implications for device reliability and efficiency
by: Neda Ahmad, et al.
Published: (2025-06-01)

Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation
by: Ya-Chao Wang, et al.
Published: (2024-01-01)

Electrical Transport in Ternary Alloys: AlGaN and InGaN and Their Role in Optoelectronic
by: Bachir, N., et al.
Published: (2012)

Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
by: Siyi Chang, et al.
Published: (2017-01-01)

AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications
by: Ren, Fan, et al.
Published: (2011)

Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment
by: J. K. Lian, et al.
Published: (2025-01-01)

Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well
by: Fanming Zeng, et al.
Published: (2016-01-01)

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
by: A. A. Marmalyuk, et al.
Published: (2009-04-01)

Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
by: Haiping Wang, et al.
Published: (2020-01-01)

GaN Based Ultraviolet Photodetectors
by: Zhao, D. G., et al.
Published: (2011)

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
by: Fulong Jiang, et al.
Published: (2018-01-01)

INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS
by: O. A. Ruban, et al.
Published: (2016-10-01)

Modeling AlGaN p-i-n photodiodes
by: N. N. Vorsin, et al.
Published: (2022-01-01)

Modulating Ohmic Contact Through InGa<sub>x</sub>N<sub>y</sub>O<sub>z</sub> Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes
by: Binbin Zhu, et al.
Published: (2016-01-01)

System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity
by: Toiyob Hossain, et al.
Published: (2025-01-01)

Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs
by: Soumen Deb, et al.
Published: (2025-01-01)

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
by: Steffan Gwyn, et al.
Published: (2021-01-01)

Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
by: Bryan Melanson, et al.
Published: (2021-01-01)

2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect
by: V. Stanishev, et al.
Published: (2025-07-01)

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection
by: Long Ge, et al.
Published: (2025-06-01)

GaN-based Photodiodes on Silicon Substrates
by: Chuah, L.S., et al.
Published: (2011)

Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
by: Tian Lan, et al.
Published: (2018-01-01)

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes
by: Zhiheng Quan, et al.
Published: (2016-01-01)

Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance
by: Dian-Ying Wu, et al.
Published: (2025-01-01)