Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces
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| Main Authors: | , |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2011
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/21146 |
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| _version_ | 1839562586197065728 |
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| author | Zhang, Yanli Tuckerman, Mark E. |
| author_facet | Zhang, Yanli Tuckerman, Mark E. |
| author_sort | Zhang, Yanli |
| collection | InTech Open eBooks |
| description | None |
| doi_str_mv | 10.5772/25143 |
| first_indexed | 2025-08-04T21:39:51Z |
| format | Electronic Book Chapter |
| fullrecord | <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-21146</identifier><datestamp>2011-10-10</datestamp>
<dc:title>Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces</dc:title>
<dc:creator>Yanli Zhang</dc:creator>
<dc:creator>Mark E. Tuckerman</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>None</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2011-10-10</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/21146</dc:identifier>
<dc:identifier>doi:10.5772/25143</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-953-307-968-4</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/326 ; Silicon Carbide - Materials, Processing and Applications in Electronic Devices</dc:source>
</oai_dc:dc> |
| id | InTech-21146 |
| institution | Matheson Library |
| isbn | 978-953-307-968-4 |
| language | English |
| last_indexed | 2025-08-04T21:39:51Z |
| publishDate | 2011 |
| publisher | IntechOpen |
| record_format | intech |
| spelling | InTech-211462011-10-10 Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces Yanli Zhang Mark E. Tuckerman Physical Sciences, Engineering and Technology None IntechOpen 2011-10-10 Chapter, Part Of Book https://www.intechopen.com/chapters/21146 doi:10.5772/25143 en ISBN:978-953-307-968-4 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/326 ; Silicon Carbide - Materials, Processing and Applications in Electronic Devices |
| spellingShingle | Physical Sciences, Engineering and Technology Zhang, Yanli Tuckerman, Mark E. Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces |
| title | Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces |
| title_full | Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces |
| title_fullStr | Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces |
| title_full_unstemmed | Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces |
| title_short | Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces |
| title_sort | creation of ordered layers on semiconductor surfaces an ab initio molecular dynamics study of the sic 001 3 2 and sic 100 c 2 2 surfaces |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/21146 |
| work_keys_str_mv | AT zhangyanli creationoforderedlayersonsemiconductorsurfacesanabinitiomoleculardynamicsstudyofthesic00132andsic100c22surfaces AT tuckermanmarke creationoforderedlayersonsemiconductorsurfacesanabinitiomoleculardynamicsstudyofthesic00132andsic100c22surfaces |