Zhang, Y., & Tuckerman, M. E. (2011). Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces. IntechOpen. https://doi.org/10.5772/25143
Chicago Style (17th ed.) CitationZhang, Yanli, and Mark E. Tuckerman. Creation of Ordered Layers on Semiconductor Surfaces: An Ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces. IntechOpen, 2011. https://doi.org/10.5772/25143.
MLA (9th ed.) CitationZhang, Yanli, and Mark E. Tuckerman. Creation of Ordered Layers on Semiconductor Surfaces: An Ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces. IntechOpen, 2011. https://doi.org/10.5772/25143.
Warning: These citations may not always be 100% accurate.