Application of Quaternary AlInGaN- Based Alloys for Light Emission Devices
None
Saved in:
| Main Authors: | Rodrigues, Sara C. P., Sipahi, Guilherme M., Scolfaro, Luísa, Jr., Eronides F. da Silva |
|---|---|
| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2011
|
| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/20513 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer
by: Hongchang Tao, et al.
Published: (2023-01-01) -
Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes
by: Kwak, Joon Seop
Published: (2012) -
Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer
by: Lei Li, et al.
Published: (2016-01-01) -
Electrical Transport in Ternary Alloys: AlGaN and InGaN and Their Role in Optoelectronic
by: Bachir, N., et al.
Published: (2012) -
Enhancing Light Extraction Efficiency of Vertical Emission of AlGaN Nanowire Light Emitting Diodes With Photonic Crystal
by: Pengwei Du, et al.
Published: (2019-01-01)


