An Analytical Solution for Inhomogeneous Strain Fields Within Wurtzite GaN Cylinders Under Compression Test
None
Saved in:
| Main Author: | Wei, X. X. |
|---|---|
| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2011
|
| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/20512 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Hydrostatic-Pressure Modulation of Band Structure and Elastic Anisotropy in Wurtzite BN, AlN, GaN and InN: A First-Principles DFT Study
by: Ilyass Ez-zejjari, et al.
Published: (2025-07-01) -
Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
by: Siyi Chang, et al.
Published: (2017-01-01) -
Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment
by: J. K. Lian, et al.
Published: (2025-01-01) -
Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
by: A. D. Yunik, et al.
Published: (2022-12-01) -
GaN Based Ultraviolet Photodetectors
by: Zhao, D. G., et al.
Published: (2011)


