Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth

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Bibliographic Details
Main Authors: Hashimoto, Tadao, Letts, Edward
Format: Electronic Book Chapter
Language:English
Published: IntechOpen 2011
Subjects:
Online Access:https://www.intechopen.com/chapters/20477
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author Hashimoto, Tadao
Letts, Edward
author_facet Hashimoto, Tadao
Letts, Edward
author_sort Hashimoto, Tadao
collection InTech Open eBooks
description None
doi_str_mv 10.5772/19594
first_indexed 2025-08-04T21:50:29Z
format Electronic
Book Chapter
fullrecord <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-20477</identifier><datestamp>2011-10-05</datestamp> <dc:title>Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth</dc:title> <dc:creator>Tadao Hashimoto</dc:creator> <dc:creator>Edward Letts</dc:creator> <dc:subject>Physical Sciences, Engineering and Technology</dc:subject> <dc:description>None</dc:description> <dc:publisher>IntechOpen</dc:publisher> <dc:date>2011-10-05</dc:date> <dc:type>Chapter, Part Of Book</dc:type> <dc:identifier>https://www.intechopen.com/chapters/20477</dc:identifier> <dc:identifier>doi:10.5772/19594</dc:identifier> <dc:language>en</dc:language> <dc:relation>ISBN:978-953-307-576-1</dc:relation> <dc:rights>https://creativecommons.org/licenses/by/3.0/</dc:rights> <dc:source>https://www.intechopen.com/books/525 ; Optoelectronics - Devices and Applications</dc:source> </oai_dc:dc>
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institution Matheson Library
isbn 978-953-307-576-1
language English
last_indexed 2025-08-04T21:50:29Z
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spelling InTech-204772011-10-05 Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth Tadao Hashimoto Edward Letts Physical Sciences, Engineering and Technology None IntechOpen 2011-10-05 Chapter, Part Of Book https://www.intechopen.com/chapters/20477 doi:10.5772/19594 en ISBN:978-953-307-576-1 https://creativecommons.org/licenses/by/3.0/ https://www.intechopen.com/books/525 ; Optoelectronics - Devices and Applications
spellingShingle Physical Sciences, Engineering and Technology
Hashimoto, Tadao
Letts, Edward
Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
title Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
title_full Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
title_fullStr Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
title_full_unstemmed Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
title_short Development of Cost-Effective Native Substrates for Gallium Nitride-Based Optoelectronic Devices via Ammonothermal Growth
title_sort development of cost effective native substrates for gallium nitride based optoelectronic devices via ammonothermal growth
topic Physical Sciences, Engineering and Technology
url https://www.intechopen.com/chapters/20477
work_keys_str_mv AT hashimototadao developmentofcosteffectivenativesubstratesforgalliumnitridebasedoptoelectronicdevicesviaammonothermalgrowth
AT lettsedward developmentofcosteffectivenativesubstratesforgalliumnitridebasedoptoelectronicdevicesviaammonothermalgrowth