Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects

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Main Authors: Klimov, Alexander, Shumsky, Vladimir
Format: Electronic Book Chapter
Language:English
Published: IntechOpen 2011
Subjects:
Online Access:https://www.intechopen.com/chapters/16769
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author Klimov, Alexander
Shumsky, Vladimir
author_facet Klimov, Alexander
Shumsky, Vladimir
author_sort Klimov, Alexander
collection InTech Open eBooks
description None
doi_str_mv 10.5772/17797
first_indexed 2025-08-04T21:44:45Z
format Electronic
Book Chapter
fullrecord <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-16769</identifier><datestamp>2011-08-23</datestamp> <dc:title>Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects</dc:title> <dc:creator>Alexander Klimov</dc:creator> <dc:creator>Vladimir Shumsky</dc:creator> <dc:subject>Physical Sciences, Engineering and Technology</dc:subject> <dc:description>None</dc:description> <dc:publisher>IntechOpen</dc:publisher> <dc:date>2011-08-23</dc:date> <dc:type>Chapter, Part Of Book</dc:type> <dc:identifier>https://www.intechopen.com/chapters/16769</dc:identifier> <dc:identifier>doi:10.5772/17797</dc:identifier> <dc:language>en</dc:language> <dc:relation>ISBN:978-953-307-453-5</dc:relation> <dc:rights>https://creativecommons.org/licenses/by-nc-sa/3.0/</dc:rights> <dc:source>https://www.intechopen.com/books/424 ; Ferroelectrics - Physical Effects</dc:source> </oai_dc:dc>
id InTech-16769
institution Matheson Library
isbn 978-953-307-453-5
language English
last_indexed 2025-08-04T21:44:45Z
publishDate 2011
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spelling InTech-167692011-08-23 Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects Alexander Klimov Vladimir Shumsky Physical Sciences, Engineering and Technology None IntechOpen 2011-08-23 Chapter, Part Of Book https://www.intechopen.com/chapters/16769 doi:10.5772/17797 en ISBN:978-953-307-453-5 https://creativecommons.org/licenses/by-nc-sa/3.0/ https://www.intechopen.com/books/424 ; Ferroelectrics - Physical Effects
spellingShingle Physical Sciences, Engineering and Technology
Klimov, Alexander
Shumsky, Vladimir
Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
title Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
title_full Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
title_fullStr Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
title_full_unstemmed Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
title_short Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects
title_sort localized states in narrow gap ferroelectric semiconductor pbsnte injection currents ir and thz photosensitivity magnetic field effects
topic Physical Sciences, Engineering and Technology
url https://www.intechopen.com/chapters/16769
work_keys_str_mv AT klimovalexander localizedstatesinnarrowgapferroelectricsemiconductorpbsnteinjectioncurrentsirandthzphotosensitivitymagneticfieldeffects
AT shumskyvladimir localizedstatesinnarrowgapferroelectricsemiconductorpbsnteinjectioncurrentsirandthzphotosensitivitymagneticfieldeffects