Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

QR Code

Ultra-Wideband GaN Power Amplifiers – From Innovative Technology to Standart Products

None

Saved in:

Bibliographic Details
Main Author:	Kistchinsky, Andrey
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/16740
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation
by: Reet Chaudhuri, et al.
Published: (2025-01-01)

GaN Power Amplifier with DPD for Enhanced Spectral Integrity in 2.3–2.5 GHz Wireless Systems
by: Mfonobong Uko
Published: (2025-07-01)

Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
by: Siyi Chang, et al.
Published: (2017-01-01)

Integrated design of GaN-on-Si power devices and drivers
by: Yan Zhangzhe, et al.
Published: (2025-05-01)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
by: A. D. Yunik, et al.
Published: (2022-12-01)

Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
by: Tian Lan, et al.
Published: (2018-01-01)

GaN Based Ultraviolet Photodetectors
by: Zhao, D. G., et al.
Published: (2011)

Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry
by: Jaesun Kim, et al.
Published: (2025-07-01)

Adsorption Characteristics of an AlGaN/GaN Heterojunction on Potassium Ions
by: Yan Dong, et al.
Published: (2025-06-01)

GaN-based Photodiodes on Silicon Substrates
by: Chuah, L.S., et al.
Published: (2011)

Ka-band miniaturized airtight wideband power amplifier
by: Zhao Peng, et al.
Published: (2025-05-01)

Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode
by: Thahab, Sabah M.
Published: (2012)

Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation
by: Ya-Chao Wang, et al.
Published: (2024-01-01)

2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect
by: V. Stanishev, et al.
Published: (2025-07-01)

System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity
by: Toiyob Hossain, et al.
Published: (2025-01-01)

Evaluation of p-GaN-gate All-GaN Cascode HEMT on SiC Substrate: DC Characteristics and Switching Performance
by: Dian-Ying Wu, et al.
Published: (2025-01-01)

GaN Nanowires Fabricated by Magnetron Sputtering Deposition
by: Shi, Feng
Published: (2011)

Implantation Damage Formation in GaN and ZnO
by: Lorenz, Katharina, et al.
Published: (2012)

On the temperature-dependence characterization and modeling of GaN HEMTs
by: Anwar Jarndal, et al.
Published: (2025-09-01)

Ultra Wideband Antennas for High Pulsed Power Applications
by: Cadilhon, Baptiste, et al.
Published: (2011)

Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer
by: Yi-Lin Tsai, et al.
Published: (2020-01-01)

The role of standarts in vegetable production
by: V.F. Pivovarov, et al.
Published: (2012-03-01)

AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications
by: Ren, Fan, et al.
Published: (2011)

Defects Passivation and Performance Enhancement of AlGaN/GaN HEMTs by Supercritical Hydrogen Treatment
by: J. K. Lian, et al.
Published: (2025-01-01)

Study on Optical Properties of Indium-Graded Semipolar InGaN/GaN Quantum Well
by: Fanming Zeng, et al.
Published: (2016-01-01)

Investigation of temperature-dependent performance degradation in AlGaN/InGaN/GaN HEMTs: Implications for device reliability and efficiency
by: Neda Ahmad, et al.
Published: (2025-06-01)

Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices
by: Shuo Su, et al.
Published: (2025-06-01)

Ultra-Wideband Automotive Radar
by: Kajiwara, Akihiro
Published: (2011)

Ultra Wideband RF Transceiver Design in CMOS Technology
by: Xia, Lingli, et al.
Published: (2011)

INVESTIGATION OF POLARIZATION IN HETEROSTRUCTURES WITH THE QUANTUM WELL AlGaN / GaN USING CAPACITANCE-VOLTAGE CHARACTERISTICS
by: O. A. Ruban, et al.
Published: (2016-10-01)

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
by: Jing Yang, et al.
Published: (2017-01-01)

Analysis and Modeling of Intrinsic Capacitance in Enhancement Mode GaN HEMT
by: Taeyoung Cho, et al.
Published: (2025-01-01)

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters
by: Can B. Uzundal, et al.
Published: (2025-06-01)

Surface Properties of p‐GaN and Formation of Nickel Metal Contacts
by: Mikko Miettinen, et al.
Published: (2025-07-01)

Transient Analysis of Donor-like Surface Traps in GaN HEMTs
by: Amirali Chalechale, et al.
Published: (2022-12-01)

Analytical Modeling for Off-State Lateral Electric Field and Breakdown Voltage of AlGaN/GaN HEMTs
by: Soumen Deb, et al.
Published: (2025-01-01)

Dynamic Device Characteristics and Linewidth Measurement of InGaN/GaN Laser Diodes
by: Steffan Gwyn, et al.
Published: (2021-01-01)

Ultra-Wideband Printed Antennas Design
by: Srifi, Mohamed Nabil
Published: (2011)

The propagation characteristics of acoustic surface waves and the applications of power ultrasound based on AlN/GaN piezoelectric thin films
by: Tao Zhang, et al.
Published: (2025-09-01)

On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes
by: Zi-Hui Zhang, et al.
Published: (2016-01-01)