Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation

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Bibliographic Details
Main Authors: Munteanu, Daniela, Autran, Jean-Luc, Martinie, Sébastien
Format: Electronic Book Chapter
Language:English
Published: IntechOpen 2011
Subjects:
Online Access:https://www.intechopen.com/chapters/16369
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author Munteanu, Daniela
Autran, Jean-Luc
Martinie, Sébastien
author_facet Munteanu, Daniela
Autran, Jean-Luc
Martinie, Sébastien
author_sort Munteanu, Daniela
collection InTech Open eBooks
description None
doi_str_mv 10.5772/16827
first_indexed 2025-08-04T21:50:18Z
format Electronic
Book Chapter
fullrecord <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-16369</identifier><datestamp>2011-07-18</datestamp> <dc:title>Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation</dc:title> <dc:creator>Daniela Munteanu</dc:creator> <dc:creator>Jean-Luc Autran</dc:creator> <dc:creator>Sébastien Martinie</dc:creator> <dc:subject>Physical Sciences, Engineering and Technology</dc:subject> <dc:description>None</dc:description> <dc:publisher>IntechOpen</dc:publisher> <dc:date>2011-07-18</dc:date> <dc:type>Chapter, Part Of Book</dc:type> <dc:identifier>https://www.intechopen.com/chapters/16369</dc:identifier> <dc:identifier>doi:10.5772/16827</dc:identifier> <dc:language>en</dc:language> <dc:relation>ISBN:978-953-307-318-7</dc:relation> <dc:rights>https://creativecommons.org/licenses/by-nc-sa/3.0/</dc:rights> <dc:source>https://www.intechopen.com/books/514 ; Nanowires - Implementations and Applications</dc:source> </oai_dc:dc>
id InTech-16369
institution Matheson Library
isbn 978-953-307-318-7
language English
last_indexed 2025-08-04T21:50:18Z
publishDate 2011
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record_format intech
spelling InTech-163692011-07-18 Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation Daniela Munteanu Jean-Luc Autran Sébastien Martinie Physical Sciences, Engineering and Technology None IntechOpen 2011-07-18 Chapter, Part Of Book https://www.intechopen.com/chapters/16369 doi:10.5772/16827 en ISBN:978-953-307-318-7 https://creativecommons.org/licenses/by-nc-sa/3.0/ https://www.intechopen.com/books/514 ; Nanowires - Implementations and Applications
spellingShingle Physical Sciences, Engineering and Technology
Munteanu, Daniela
Autran, Jean-Luc
Martinie, Sébastien
Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
title Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
title_full Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
title_fullStr Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
title_full_unstemmed Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
title_short Numerical Simulation of Transient Response in 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation
title_sort numerical simulation of transient response in 3 d multi channel nanowire mosfets submitted to heavy ion irradiation
topic Physical Sciences, Engineering and Technology
url https://www.intechopen.com/chapters/16369
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AT autranjeanluc numericalsimulationoftransientresponsein3dmultichannelnanowiremosfetssubmittedtoheavyionirradiation
AT martiniesebastien numericalsimulationoftransientresponsein3dmultichannelnanowiremosfetssubmittedtoheavyionirradiation