Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

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Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

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Bibliographic Details
Main Authors:	Cheng, Chien-Min, Chen, Kai-Huang, Lin, Chun-Cheng, Chen, Ying-Chung, Chen, Chih-Sheng, Chang, Ping-Kuan
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/16179
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