Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film
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| Main Authors: | , , , , , |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2011
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| Online Access: | https://www.intechopen.com/chapters/16179 |
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| _version_ | 1839562884261085184 |
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| author | Cheng, Chien-Min Chen, Kai-Huang Lin, Chun-Cheng Chen, Ying-Chung Chen, Chih-Sheng Chang, Ping-Kuan |
| author_facet | Cheng, Chien-Min Chen, Kai-Huang Lin, Chun-Cheng Chen, Ying-Chung Chen, Chih-Sheng Chang, Ping-Kuan |
| author_sort | Cheng, Chien-Min |
| collection | InTech Open eBooks |
| description | None |
| doi_str_mv | 10.5772/16405 |
| first_indexed | 2025-08-04T21:44:36Z |
| format | Electronic Book Chapter |
| fullrecord | <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-16179</identifier><datestamp>2011-08-23</datestamp>
<dc:title>Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film</dc:title>
<dc:creator>Chien-Min Cheng</dc:creator>
<dc:creator>Kai-Huang Chen</dc:creator>
<dc:creator>Chun-Cheng Lin</dc:creator>
<dc:creator>Ying-Chung Chen</dc:creator>
<dc:creator>Chih-Sheng Chen</dc:creator>
<dc:creator>Ping-Kuan Chang</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>None</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2011-08-23</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/16179</dc:identifier>
<dc:identifier>doi:10.5772/16405</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-953-307-456-6</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by-nc-sa/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/429 ; Ferroelectrics - Applications</dc:source>
</oai_dc:dc> |
| id | InTech-16179 |
| institution | Matheson Library |
| isbn | 978-953-307-456-6 |
| language | English |
| last_indexed | 2025-08-04T21:44:36Z |
| publishDate | 2011 |
| publisher | IntechOpen |
| record_format | intech |
| spelling | InTech-161792011-08-23 Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film Chien-Min Cheng Kai-Huang Chen Chun-Cheng Lin Ying-Chung Chen Chih-Sheng Chen Ping-Kuan Chang Physical Sciences, Engineering and Technology None IntechOpen 2011-08-23 Chapter, Part Of Book https://www.intechopen.com/chapters/16179 doi:10.5772/16405 en ISBN:978-953-307-456-6 https://creativecommons.org/licenses/by-nc-sa/3.0/ https://www.intechopen.com/books/429 ; Ferroelectrics - Applications |
| spellingShingle | Physical Sciences, Engineering and Technology Cheng, Chien-Min Chen, Kai-Huang Lin, Chun-Cheng Chen, Ying-Chung Chen, Chih-Sheng Chang, Ping-Kuan Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film |
| title | Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film |
| title_full | Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film |
| title_fullStr | Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film |
| title_full_unstemmed | Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film |
| title_short | Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film |
| title_sort | fabrication and study on one transistor capacitor structure of nonvolatile random access memory tft devices using ferroelectric gated oxide film |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/16179 |
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