APA (7th ed.) Citation

Cheng, C., Chen, K., Lin, C., Chen, Y., Chen, C., & Chang, P. (2011). Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film. IntechOpen. https://doi.org/10.5772/16405

Chicago Style (17th ed.) Citation

Cheng, Chien-Min, Kai-Huang Chen, Chun-Cheng Lin, Ying-Chung Chen, Chih-Sheng Chen, and Ping-Kuan Chang. Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film. IntechOpen, 2011. https://doi.org/10.5772/16405.

MLA (9th ed.) Citation

Cheng, Chien-Min, et al. Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film. IntechOpen, 2011. https://doi.org/10.5772/16405.