Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

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Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

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Bibliographic Details
Main Author:	Mukherjee, Moumita
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/15089
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