Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics
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| Main Author: | |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2011
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/15089 |
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| _version_ | 1839561546790862848 |
|---|---|
| author | Mukherjee, Moumita |
| author_facet | Mukherjee, Moumita |
| author_sort | Mukherjee, Moumita |
| collection | InTech Open eBooks |
| description | None |
| doi_str_mv | 10.5772/15537 |
| first_indexed | 2025-08-04T21:23:20Z |
| format | Electronic Book Chapter |
| fullrecord | <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><identifier>InTech-15089</identifier><datestamp>2011-04-04</datestamp>
<dc:title>Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics</dc:title>
<dc:creator>Moumita Mukherjee</dc:creator>
<dc:subject>Physical Sciences, Engineering and Technology</dc:subject>
<dc:description>None</dc:description>
<dc:publisher>IntechOpen</dc:publisher>
<dc:date>2011-04-04</dc:date>
<dc:type>Chapter, Part Of Book</dc:type>
<dc:identifier>https://www.intechopen.com/chapters/15089</dc:identifier>
<dc:identifier>doi:10.5772/15537</dc:identifier>
<dc:language>en</dc:language>
<dc:relation>ISBN:978-953-307-201-2</dc:relation>
<dc:rights>https://creativecommons.org/licenses/by-nc-sa/3.0/</dc:rights>
<dc:source>https://www.intechopen.com/books/83 ; Properties and Applications of Silicon Carbide</dc:source>
</oai_dc:dc> |
| id | InTech-15089 |
| institution | Matheson Library |
| isbn | 978-953-307-201-2 |
| language | English |
| last_indexed | 2025-08-04T21:23:20Z |
| publishDate | 2011 |
| publisher | IntechOpen |
| record_format | intech |
| spelling | InTech-150892011-04-04 Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics Moumita Mukherjee Physical Sciences, Engineering and Technology None IntechOpen 2011-04-04 Chapter, Part Of Book https://www.intechopen.com/chapters/15089 doi:10.5772/15537 en ISBN:978-953-307-201-2 https://creativecommons.org/licenses/by-nc-sa/3.0/ https://www.intechopen.com/books/83 ; Properties and Applications of Silicon Carbide |
| spellingShingle | Physical Sciences, Engineering and Technology Mukherjee, Moumita Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics |
| title | Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics |
| title_full | Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics |
| title_fullStr | Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics |
| title_full_unstemmed | Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics |
| title_short | Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics |
| title_sort | silicon carbide based transit time devices the new frontier in high power thz electronics |
| topic | Physical Sciences, Engineering and Technology |
| url | https://www.intechopen.com/chapters/15089 |
| work_keys_str_mv | AT mukherjeemoumita siliconcarbidebasedtransittimedevicesthenewfrontierinhighpowerthzelectronics |