APA (7th ed.) Citation

Mukherjee, M. (2011). Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics. IntechOpen. https://doi.org/10.5772/15537

Chicago Style (17th ed.) Citation

Mukherjee, Moumita. Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics. IntechOpen, 2011. https://doi.org/10.5772/15537.

MLA (9th ed.) Citation

Mukherjee, Moumita. Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics. IntechOpen, 2011. https://doi.org/10.5772/15537.

Warning: These citations may not always be 100% accurate.