Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime

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Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime

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Bibliographic Details
Main Authors:	Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi
Format:	Electronic Book Chapter
Language:	English
Published:	IntechOpen 2011
Subjects:	Physical Sciences, Engineering and Technology
Online Access:	https://www.intechopen.com/chapters/15086
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