Hijikata, Y., Yaguchi, H., & Yoshida, S. (2011). Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime. IntechOpen. https://doi.org/10.5772/14591
Chicago Style (17th ed.) CitationHijikata, Yasuto, Hiroyuki Yaguchi, and Sadafumi Yoshida. Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime. IntechOpen, 2011. https://doi.org/10.5772/14591.
MLA (9th ed.) CitationHijikata, Yasuto, et al. Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime. IntechOpen, 2011. https://doi.org/10.5772/14591.
Warning: These citations may not always be 100% accurate.