Mochizuki, K. (2011). One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide. IntechOpen. https://doi.org/10.5772/14553
Chicago Style (17th ed.) CitationMochizuki, Kazuhiro. One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide. IntechOpen, 2011. https://doi.org/10.5772/14553.
MLA (9th ed.) CitationMochizuki, Kazuhiro. One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide. IntechOpen, 2011. https://doi.org/10.5772/14553.
Warning: These citations may not always be 100% accurate.