Instabilities in MOS devices /
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New York :
Gordon & Breach Science Publishers,
c1981.
|
| Series: | Electrocomponent science monographs ;
v. 1 |
| Subjects: | |
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| LEADER | 00000nam a2200000u 4500 | ||
|---|---|---|---|
| 001 | 00699691 | ||
| 003 | PWmBRO | ||
| 005 | 20240602101159.0 | ||
| 008 | 801003s1981 nyu b 00110 eng | ||
| 020 | |a 0677055900 | ||
| 050 | 0 | |a TK7871.99.M44 |b D38 | |
| 082 | 0 | |a 621.3815/2�19 | |
| 090 | 0 | |b 621.38/152/D262i | |
| 100 | 1 | 0 | |a Davis, J. R. |q (John Richard), |d 1951- |
| 245 | 1 | 0 | |a Instabilities in MOS devices / |c J. R. Davis. |
| 260 | 0 | |a New York : |b Gordon & Breach Science Publishers, |c c1981. | |
| 300 | |a xv,175 p. | ||
| 440 | 0 | |a Electrocomponent science monographs ; |v v. 1 | |
| 650 | 0 | |a Metal oxide semiconductors. | |
| 942 | |2 ddc | ||
| 952 | |0 0 |1 0 |4 0 |6 621_381520000000000_D262I |7 0 |8 MN |9 52713 |a ML015 |b ML015 |c MN |d 2024-06-02 |l 0 |o 621.38152 D262i |p 054564 |r 2018-03-24 00:00:00 |w 2018-03-24 |y BK | ||
| 994 | 0 | 1 | |a T1001 054 564 |
| 999 | |c 38086 |d 38086 | ||


