Deep centers in semiconductors : a state of the art approach /
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Format: | Book |
Language: | English |
Published: |
New York :
Gordon and Breach,
c1986.
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008 | 850219s1986 nyua b 00100 eng | ||
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050 | 0 | |a QC611.6.D4 |b D418 1986 | |
082 | 0 | |a 537.6/22�19 | |
090 | |b 537.622/D311 | ||
245 | 0 | 0 | |a Deep centers in semiconductors : |b a state of the art approach / |c edited by Sokrates T. Pantelides. |
260 | 0 | |a New York : |b Gordon and Breach, |c c1986. | |
300 | |a xi, 777 p. : |b ill. | ||
650 | 0 | |a Semiconductors |x Defects | |
650 | 0 | |a Electron donor-acceptor complexes | |
650 | 0 | |a Impurity centers | |
700 | 1 | 0 | |a Pantelides, Sokrates T. |
942 | |2 ddc | ||
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