Kết quả tìm kiếm - Zili Xie
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1
Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes Bằng Ting Zhi, Tao Tao, Bin Liu, Zili Xie, Peng Chen, Rong Zhang
Được phát hành 2016-01-01The mechanisms of reverse leakage in InGaN/GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current–voltage (<italic>I–V</italic>) characteristics with the temperature ranging from 50 to 350...
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2
High Performance Wide Angle DBR Design for Optoelectronic Devices Bằng Ting Zhi, Tao Tao, Bin Liu, Yu Yan, Zili Xie, Hong Zhao, Dunjun Chen
Được phát hành 2021-01-01To improve the performance of optoelectronic devices, a high performance wide angle SiO<sub>2</sub>/Ti<sub>3</sub>O<sub>5</sub> Distributed Bragg Reflector (DBR) mirror was designed and fabricated on double polished sapphire substrate. 17-pairs gradually varied DB...
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3
Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction Bằng Danbei Wang, Bin Liu, Hongmei Zhang, Hong Zhao, Tao Tao, Zili Xie, Rong Zhang, Youdou Zheng
Được phát hành 2019-01-01It is known that the commercialized white light-emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WL...
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4
Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures Bằng Tao Tao, Ting Zhi, Xu Cen, Bin Liu, Qi Wang, Zili Xie, Peng Chen, Dunjun Chen, Yugang Zhou, Youdou Zheng, Rong Zhang
Được phát hành 2018-01-01Hybrid white light emitting diodes (LEDs) have been developed utilizing micro-LEDs radiatively pumping down-conversion phosphor materials. The cyan InGaN/GaN multiple quantum wells LEDs with 95 μm in square are fabricated into 4 × 4 pixels as one unit in 4 in wafer b...
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5
The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement Bằng Fulong Jiang, Yaying Liu, Menghan Liu, Ningze Zhuo, Peng Gao, Huajie Fang, Peng Chen, Bin Liu, Xiangqian Xiu, Zili Xie, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng
Được phát hành 2018-01-01We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited ph...
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