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    Nanoscaffold Ba0.6Sr0.4TiO3:Nd2O3 ferroelectric memristors crossbar array for neuromorphic computing and secure encryption

    Nanoscaffold Ba0.6Sr0.4TiO3:Nd2O3 ferroelectric memristors crossbar array for neuromorphic computing and secure encryption by Weifeng Zhang, Jikang Xu, Yongrui Wang, Yinxing Zhang, Yu Wang, Pengfei Li, Yongqing Jia, Zhen Zhao, Changliang Li, Biao Yang, Yue Hou, Zhenqiang Guo, Zeze Huang, Yincheng Qi, Xiaobing Yan

    Published 2025-09-01

    Recent advancements in AI have spurred interest in ferroelectric memristors for neuromorphic chips due to their ability to precisely control resistive states through polarization flip-flop without electroforming. However, oxygen vacancies in these devices often cause high leakage current, low endura...

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