Search Results - V. R. Stempitsky

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  1. 1
    Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System

    Large Signal Performance of the Gallium Nitride Heterostructure Field-Effect Transistor With a Graphene Heat-Removal System by V. S. Volcheck, V. R. Stempitsky

    Published 2022-03-01
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  2. 2
    Performance Characteristics of an Infrared Photodetector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride

    Performance Characteristics of an Infrared Photodetector Using Intersuband Junctions in Quantum Wells Based on Gallium Nitride by V. S. Volcheck, V. R. Stempitsky

    Published 2024-06-01
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  3. 3
    Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material

    Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material by V. S. Volcheck, V. R. Stempitsky

    Published 2021-10-01
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  4. 4
    Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor

    Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor by V. S. Volcheck, V. R. Stempitsky

    Published 2020-12-01
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  5. 5
    Optimization of technological parameters And Verification of Electrical Characteristics OF THE 0.35 μm MOSFET

    Optimization of technological parameters And Verification of Electrical Characteristics OF THE 0.35 μm MOSFET by T. T. Tran, V. R. Stempitsky, S. A. Soroka

    Published 2019-06-01
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  6. 6
    Frequency characteristics of integral Hall sensor

    Frequency characteristics of integral Hall sensor by D. Ha. Dao, V. R. Stempitsky

    Published 2019-06-01
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  7. 7
    INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

    INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY by S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky

    Published 2019-06-01
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  8. 8
    Drift-Diffusion Model parameterS Optimization

    Drift-Diffusion Model parameterS Optimization by T. T. Trung, A. M. Borovik, V. R. Stempitsky

    Published 2019-06-01
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  9. 9
    Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure

    Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure by I. Yu. Lovshenko, V. R. Stempitsky, V. T. Shandarovich

    Published 2020-11-01
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  10. 10
    Electrical model of the 90 nm MOSFET

    Electrical model of the 90 nm MOSFET by A. M. Borovik, V. T. Khanko, V. R. Stempitsky

    Published 2019-06-01
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  11. 11
    QUANTUM-MECHANICAL SIMULATION of interaction mechanisms between fragment of bacteria cell wall and silicon surface

    QUANTUM-MECHANICAL SIMULATION of interaction mechanisms between fragment of bacteria cell wall and silicon surface by V. V. Burko, Y. V. Douhaya, V. R. Stempitsky

    Published 2019-06-01
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  12. 12
    DESIGN OF HIGH-SPEED IGBT DEVICE

    DESIGN OF HIGH-SPEED IGBT DEVICE by I. Yu. Lovshenko, V. R. Stempitsky, A. S. Turtsevich, I. .. Shelibak

    Published 2019-06-01
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  13. 13
    Electronic and magnetic properties of ABO<sub>3</sub> perovskites (A - Ca, Ce, Y, Na; B - Ti, Nb, Fe, Mn, Ta; O)

    Electronic and magnetic properties of ABO<sub>3</sub> perovskites (A - Ca, Ce, Y, Na; B - Ti, Nb, Fe, Mn, Ta; O) by P. A. Praskurava, D. S. Hvazdousky, M. S. Baranava, V. R. Stempitsky

    Published 2020-05-01
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  14. 14
    CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS

    CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS by V. S. Volchek, D. HA. Dao, I. Yu. Lovshenko, V. R. Stempitsky

    Published 2019-06-01
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  15. 15
    Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement

    Design Solutions for Device Structures of Bipolar Transistors with an Insulated Gate and a Vertical Channel Arrangement by Trong Thanh Nguyen, Dao Dinh Ha, I. Yu. Lovshenko, V. R. Stempitsky

    Published 2024-12-01
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  16. 16
    PRELIMINARY EXPERIMENTAL DATA PROCESSING IN STATISTICAL IC DESIGN

    PRELIMINARY EXPERIMENTAL DATA PROCESSING IN STATISTICAL IC DESIGN by P. G. Pavlov, T. T. Tran, A. I. Kostrov, V. V. Nelayev, V. R. Stempitsky

    Published 2019-06-01
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  17. 17
    27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION

    27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION by T. T. Trung, A. M. Borovik, I. Yu. Lovshenko, V. R. Stempitsky, A. A. Kuleshov

    Published 2019-06-01
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  18. 18
    Design and Performance of Amorphous Silicon Based on Uncooled Bolometer-Type Infrared Focal Plane Arrays

    Design and Performance of Amorphous Silicon Based on Uncooled Bolometer-Type Infrared Focal Plane Arrays by Van Trieu Tran, V. R. Stempitsky, I. Yu. Lovshenko, K. V. Korsak, Dinh Ha Dao

    Published 2023-04-01
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  19. 19
    THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY

    THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY by D. HA. Dao, V. S. Volchek, M. S. Baranava, I. Yu. Lovshenko, D. C. Hvazdouski, V. R. Stempitsky

    Published 2019-06-01
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  20. 20
    Application of Cad Systems to Accounting for Mechanical Stresses in the Development of Uncooled Thermal Detectors of the Bolometric Type

    Application of Cad Systems to Accounting for Mechanical Stresses in the Development of Uncooled Thermal Detectors of the Bolometric Type by Tran Van Trieu, I. Yu. Lovshenko, V. R. Stempitsky, K. V. Korsak, Tran Tuan Trung, Dao Dinh Ha, V. V. Kolos

    Published 2023-03-01
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