Search Results - V. A. Pilipenko

EFFECT OF RAPID THERMAL TREATMENT ТЕMPERATURE ON ELECTROPHYSICAL PROPERTIES OF NICKEL FILMS ON SILICON by Ja. A. Solovjov, V. A. Pilipenko

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EFFECT OF RAPID THERMAL TREATMENT CONDITIONS ON ELECTROPHYSICAL PROPERTIES OF CROMIUM THIN FILMS ON SILICON by J. A. Solovjov, V. A. Pilipenko

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Effect of Pulsed Photon Processing in Nitrogen Ambient on Optical and Electrophysical Characteristics of Silicon Dioxide Layers of Its Boundaries with Silicon by N. S. Kovalchuk, V. A. Pilipenko, Ja. A. Solovjov

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Rapid thermal treatment robotics unit for creation of electronic equipment devices by V. A. Saladukha, V. A. Pilipenko, V. P. Yakovlev

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Influence of the rapid thermal treatment of the gate dielectric on the parameters of integrated circuits of time devices by V. A. Saladukha, V. A. Pilipenko, V. A. Gorushko

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Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide by V. A. Solodukha, V. A. Pilipenko, V. A. Gorushko

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Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit by J. A. Solovjov, V. A. Pilipenko, V. P. Yakovlev

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INFLUENCE OF TIME MODES OF THERMAL TREATMENT ON Pt-Si SYSTEM MICROSTRUCTURE by V. A. Saladukha, V. A. Pilipenko, F. F. Komarov, V. A. Gorushko

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The impact of formation modes of platinum silicide by the quick heat treatment on Schottky diodes parameters by V. A. Saladukha, V. A. Pilipenko, V. A. Gorushko, V. A. Philipenya

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Electron-microscope investigations of the Pt-Si system during its rapid thermal treatment by V. A. Saladukha, V. A. Pilipenko, F. F. Komarov, V. A. Gorushko

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Formation of a gate dielectric of nanometer thickness by rapid thermal treatment by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, D. V. Shestovski

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Formation OF ZINC OXIDE THIN FILMS BY COMBINED METHOD OF HYDROTHERMAL AND LAYERED ATOM DEPOSITION by E. B. Chubenko, V. P. Bondarenko, V. A. Pilipenko, K. .. Topalli, A. K. Okyay

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METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS by V. A. Pilipenko, A. N. Petlitsky, V. A. Gorushko, S. V. Shvedov, V. V. Ponaryadov

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The Influence of Rapid Heat Treatment During the Formation of Aluminum-Polysilicon Contacts on the Electrical Parameters of CMOS Microcircuits by V. A. Pilipenko, N. S. Kovalchuk, Ja. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin

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Reliability Express Control of the Gate Dielectric of Semiconductor Devices by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko

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Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts by V. A. Pilipenko, V. A. Solodukha, N. S. Kovalchuk, J. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin

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Formation OF NANOCOMPOSITE MATERIALS BASED ON POROUS SILICON AND ZINC OXIDE BY ELECTROCHEMICAL TECHNIQUE by A. I. Sherstnyov, E. B. Chubenko, S. V. Redko, V. A. Petrovich, V. A. Pilipenko, V. P. Bondarenko

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EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS by S. A. Chizhik, S. P. Basalaev, V. A. Pilipenko, A. L. Khudoley, T. A. Kuznetsova, V. V. Chikunov, A. A. Suslov

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KELVIN PROBE SELF-CALIBRATION MODE FOR SEMICONDUCTOR WAFERS PROPERTIES MONITORING by R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky

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Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski

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