Søgeresultater - Tim Wernicke
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Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes af Gregor Hofmann, Anton Muhin, Norman Susilo, Friedhard Romer, Tim Wernicke, Michael Kneissl, Bernd Witzigmann
Udgivet 2024-01-01Numerical simulations of carrier transport in aluminium gallium nitride based ultraviolet light emitting diodes (UV-LED) are performed in order to understand injection efficiency for light sources in the deep ultraviolet. With our simulator, calibrated with experimental data from a 265 nm UV-LED, qu...
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Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode af Friedhard Romer, Gregor Hofmann, Jakob Hopfner, Marcel Schilling, Anton Muhin, Tim Wernicke, Michael Kneissl, Bernd Witzigmann
Udgivet 2024-01-01Aluminium Gallium Nitride (AlGaN) based light emitting diodes (LED) are the enabling technology for compact emitters of deep ultraviolet (DUV) radiation and are in high demand for environmental and medical applications. The efficiency of recent DUV LEDs is in the range of a few percent providing som...
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Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States af Sebastian Kolle, Friedhard Romer, Giulia Cardinali, Alexander Schulz, Norman Susilo, Daniel Hauer Vidal, Tim Wernicke, Michael Kneissl, Bernd Witzigmann
Udgivet 2024-01-01Simulations of optical gain in aluminum gallium nitride (AlGaN) quantum wells are extended to the high charge carrier density regime required for achieving gain at 275 nm for UV laser diodes. Coulomb interaction is modeled using the 2nd Born approximation. We demonstrate good agreement with experime...
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Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs af Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Normal Susilo, Daniel Hauer Vidal, Anton Muhin, Luca Sulmoni, Tim Wernicke, Micheal Kneissl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Udgivet 2024-01-01In this paper we investigate the reliability of AlGaN-based UV-C LEDs with an emission wavelength of 265 nm. By submitting the devices to constant current stress, two main electrical degradation processes are identified: a turn-on voltage shift and an increase in the forward leakage current. In part...
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