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Simon Sze

Simon Min Sze, or Shi Min (; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Provided by Wikipedia
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    Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

    Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device by Wei‐Chen Huang, Hao‐Xuan Zheng, Po‐Hsun Chen, Ting‐Chang Chang, Yung‐Fang Tan, Shih‐Kai Lin, Yong‐Ci Zhang, Fu‐Yuan Jin, Chung‐Wei Wu, Yu‐Hsuan Yeh, Sheng‐Yao Chou, Hui‐Chun Huang, Yan‐Wen Chen, Simon M. Sze

    Published 2020-06-01
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