Search Results - R. I. Vorobey
- Showing 1 - 11 results of 11
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Charge-Sensitive Technique for Deformation Processes’ Study by K. U. Pantsialeyeu, U. A. Mikitsevich, A. I. Svistun, R. I. Vorobey, O. K. Gusev, A. L. Zharin
Published 2022-12-01
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KELVIN PROBE’S STRAY CAPACITANCE AND NOISE SIMULATION by S. Danyluk, A. V. Dubanevich, O. K. Gusev, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky, R. I. Vorobey, A. L. Zharin
Published 2015-03-01
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STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL by R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky, K. L. Tyavlovsky
Published 2015-03-01
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STUDY OF SILICON-INSULATOR STRUCTURE DEFECTS BASED ON ANALYSIS OF A SPATIAL DISTRIBUTION OF A SEMICONDUCTOR WAFERS’ SURFACE POTENTIAL by R. I. Vorobey, O. K. Gusev, A. L. Zharin, A. N. Petlitsky, V. A. Pilipenko, A. S. Turtsevitch, A. K. Tyavlovsky, K. L. Tyavlovsky
Published 2015-03-01
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CHARACTERIZATION OF THE ELECTROPHYSICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE USING PROBE ELECTROMETRY METHODS by V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Published 2017-12-01
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