Search Results - N. A. Poklonski

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  1. 1
    Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator”

    Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator” by N. A. Poklonski, I. I. Anikeev, S. A. Vyrko

    Published 2021-10-01
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  2. 2
    High-Frequency Capacitor with Working Substance "Insulator-Undoped Silicon-Insulator"

    High-Frequency Capacitor with Working Substance "Insulator-Undoped Silicon-Insulator" by N. A. Poklonski, I. I. Anikeev, S. A. Vyrko

    Published 2022-12-01
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  3. 3
    CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION

    CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION by N. A. Poklonski, A. I. Kovalev, N. I. Gorbachuk, S. V. Shpakovski

    Published 2018-06-01
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  4. 4
    Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on its Reactive Impedance

    Effect of Hole Extraction from the Base Region of a Silicon <i>p–n–p</i> Transistor on its Reactive Impedance by N. I. Gorbachuk, N. A. Poklonski, Ya. N. Marochkina, S. V. Shpakovski

    Published 2019-12-01
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  5. 5
    Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy

    Controlling of Differential Resistance of <i>p–n</i>-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy by N. I. Gorbachuk, N. A. Poklonski, Ya. N. Marochkina, S. V. Shpakovski

    Published 2019-09-01
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  6. 6
    Model of Electromagnetic Emitter Based on a Stream of Single Electrons inside Curved Carbon Nanotube

    Model of Electromagnetic Emitter Based on a Stream of Single Electrons inside Curved Carbon Nanotube by N. A. Poklonski, S. A. Vyrko, A. T. Vlassov, A. I. Siahlo, S. V. Ratkevich

    Published 2018-12-01
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  7. 7
    Model of Field Electron Emission from the Edge of Flat Graphene into Vacuum

    Model of Field Electron Emission from the Edge of Flat Graphene into Vacuum by N. A. Poklonski, A. I. Siahlo, S. A. Vyrko, S. V. Ratkevich, A. T. Vlassov

    Published 2019-03-01
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  8. 8
    Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects

    Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects by N. A. Poklonski, S. A. Vyrko, A. I. Kovalev, I. I. Anikeev, N. I. Gorbachuk

    Published 2021-03-01
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  9. 9
    TECHNIQUE OF ESTIMATE OF CONDUCTIVITY OF SMALL COAL SAMPLES BY THEIR INFLUENCE ON SIGNAL OF SPIN-LABEL IN RESONATOR OF ESR SPECTROMETER

    TECHNIQUE OF ESTIMATE OF CONDUCTIVITY OF SMALL COAL SAMPLES BY THEIR INFLUENCE ON SIGNAL OF SPIN-LABEL IN RESONATOR OF ESR SPECTROMETER by N. A. Poklonski, S. A. Vyrko, O. N. Poklonskaya, N. I. Gorbachuk, A. I. Siahlo

    Published 2015-03-01
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  10. 10
    FAST METHOD OF NON-CONTACT MICROWAVE MEASUREMENTS OF ELECTRICAL PARAMETERS OF COMPACT SAMPLES

    FAST METHOD OF NON-CONTACT MICROWAVE MEASUREMENTS OF ELECTRICAL PARAMETERS OF COMPACT SAMPLES by N. A. Poklonski, A. I. Siahlo, V. T. Shnitko, V. A. Merkulov, O. M. Davidenia, A. I. Kovalev

    Published 2015-03-01
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  11. 11
    Inductive Type Impedance of Mo/<i>n</i>-Si Barrier Structures Irradiated with Alpha Particles

    Inductive Type Impedance of Mo/<i>n</i>-Si Barrier Structures Irradiated with Alpha Particles by N. A. Poklonski, A. I. Kovalev, K. V. Usenko, E. A. Ermakova, N. I. Gorbachuk, S. B. Lastovski

    Published 2023-04-01
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  12. 12
    Disordered Tin Oxide Films for Thermoelectric Applications: Correlation between Microstructure, Electrical Conductivity and Seebeck Coefficient

    Disordered Tin Oxide Films for Thermoelectric Applications: Correlation between Microstructure, Electrical Conductivity and Seebeck Coefficient by V. K. Ksenevich, V. A. Dorosinets, M. A. Samarina, N. A. Poklonski, I. A. Svito, D. V. Adamchuk, G. Abdurakhmanov

    Published 2025-07-01
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