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    Quantitative analysis of impurities in neutron transmutation-doped silicon carbide wafers using neutron activation analysis

    Quantitative analysis of impurities in neutron transmutation-doped silicon carbide wafers using neutron activation analysis by Junhyeok Kim, Byung-Gun Park, Junesic Park, Gi-Doo Kang, Gwang-Min Sun, Myong-Seop Kim

    Published 2025-11-01
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