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    Development of 6-inch h-BN thick wafers od Z. Alemoush, M. Almohammad, J. Li, J. Y. Lin, H. X. Jiang

    Wydane 2025-06-01

    We report the first successful synthesis of 40 μm thick h-BN wafers with a diameter of 6 in. using hydride vapor phase epitaxy. This accomplishment was made possible by employing BCl3 as the B precursor to eliminate carbon impurities, utilizing inert N2 as the carrier and separation gas to isolate B...

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