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    Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide under the Consideration of Tunnel Oxide Areas

    Enhancement of the Transient Current Behavior of MIS Tunnel Diodes With Ultra-Edge-Thickened (UET) Oxide under the Consideration of Tunnel Oxide Areas af Jun-Yi Lin, Sung-Wei Huang, Jenn-Gwo Hwu

    Udgivet 2025-01-01

    In this research, the steady-state and transient behavior of the p-type metal-insulator-semiconductor (MIS) tunnel-diodes (TD) with ultra-edge-thickened (UET) oxide was studied, utilizing experimental results and TCAD simulations. The investigation explores how the gate voltage (VG) influences the g...

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