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    Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer

    Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer by Jinxing Wu, Peixian Li, Xiaowei Zhou, Jiangtao Wu, Yue Hao

    Published 2021-01-01

    A 365 nm Al<sub>x</sub>Ga<sub>1-x</sub>N-based ultraviolet light-emitting diodes (LEDs) with double Al composition gradient last quantum barrier and hole supply layer structure has been studied. Experimental results show that the proposed structure enhances the carrier inject...

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